0.5 μm gate length InP/In0.75Ga0.25As/InP pseudomorphic HEMT with high DC and RF performance
- 13 May 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (10) , 841-842
- https://doi.org/10.1049/el:19930562
Abstract
High performance InP/In0.75Ga0.25As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 μm are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.Keywords
This publication has 1 reference indexed in Scilit:
- Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003