Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A) , L202-204
- https://doi.org/10.1143/jjap.30.l202
Abstract
We have designed and constructed a new pressure-controlled Hg cell for molecular beam epitaxy growth of CdHgTe. It generates a stable Hg flux by regulating the vapor pressure with a capacitance manometer / reservoir heater feedback loop. The Hg flux intensity was controlled up to 2.4×1016 cm-2·s-1 by changing the vapor pressure in the Hg reservoir. This Hg cell has the capability to switch the flux on and off and to degas the Hg without introducing Hg into the growth chamber, through the use of valves. A single-crystalline Cd x Hg1-x Te film with the composition of x=0.21 was grown using an MBE system equipped with this new Hg cell.Keywords
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