Threshold energy for impact ionization by holes in GaAs
- 1 November 1974
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 50 (2) , 120-122
- https://doi.org/10.1016/0375-9601(74)90901-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Transition probability of impact ionization in siliconJournal of Physics and Chemistry of Solids, 1967
- Maximum Anisotropy Approximation for Calculating Electron Distributions; Application to High Field Transport in SemiconductorsPhysical Review B, 1964
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960