Computer techniques for solving metal-semiconductor barrier height. Application to Au - CdS thin-film Schottky diodes

Abstract
Computer programs are developed for numerical determination of the Schottky-barrier heights from the differential capacitance method, the current/voltage characteristic method under forward bias and the Fowler photocurrent method. The basic theory of these methods is briefly described. As a practical application, the programs have been used to investigate metal-semiconductor contact properties.