Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering
- 14 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (20) , 2556-2558
- https://doi.org/10.1063/1.112634
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High Frequency Surface Acoustic Wave Filter Using ZnO/Diamond/Si StructureJapanese Journal of Applied Physics, 1994
- High frequency bandpass filter using polycrystalline diamondDiamond and Related Materials, 1993
- Epitaxial growth of aluminum-doped zinc oxide films on (11–.0) oriented sapphire substratesJournal of Crystal Growth, 1992
- Low-loss epitaxial ZnO optical waveguides on sapphire by rf magnetron sputteringJournal of Applied Physics, 1987
- 2.2 GHz SAW Filters Using ZnO/Al2O3 StructureJapanese Journal of Applied Physics, 1981
- Characterization of ZnO piezoelectric films prepared by rf planar-magnetron sputteringJournal of Applied Physics, 1980
- Structures and SAW properties of rf-sputtered single-crystal films of ZnO on sapphireJournal of Applied Physics, 1980
- High rate epitaxial growth of ZnO films on sapphire by planar magnetron rf sputtering systemJournal of Crystal Growth, 1978
- R.f. sputtered epitaxial ZnO films on sapphire for integrated opticsThin Solid Films, 1976
- Surface-acoustic-wave devices for communicationsProceedings of the IEEE, 1976