Effect of oxygen on the photoluminescence of CdS/CdTe thin films
- 15 May 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3886-3888
- https://doi.org/10.1063/1.332906
Abstract
Photoluminescence (PL) of CdS/CdTe thin films prepared with and without oxygen has been studied. A donor‐acceptor transition (1.521 eV at 4.2 K) was observed only at the CdS/CdTe interface of samples prepared in an oxygen ambient. Together with the observed relative strength of the deep acceptor level, Ev+0.15 eV, it is possible to correlate the PL data with the type of conduction in CdTe films prepared in different atmospheres and the shallow‐ or deep‐junction behavior of the CdS/CdTe solar cell.This publication has 4 references indexed in Scilit:
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- Optical properties of polycrystalline CdTe filmsJournal of Applied Physics, 1981
- Photoluminescence in high-resistivity CdTe : InJournal of Applied Physics, 1975
- The Edge Emission and Phonon Effects in the Photoluminescence of CdTePhysica Status Solidi (b), 1969