ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS
- 1 October 1970
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (7) , 281-283
- https://doi.org/10.1063/1.1653402
Abstract
Electromigration-induced failures in aluminum film conductors have been studied. It is shown that large-grain films have a longer mean time to failure (MTF) than the small-grain films. A further increase in MTF is observed for films with a glass overcoating. This increase can be understood in terms of the observed grain growth which results from the glass overcoating process. Histograms showing the location of failures are interpreted to indicate that effects due to both temperature gradients and microstructural inhomogeneities are important.Keywords
This publication has 8 references indexed in Scilit:
- Electromigration Damage in Aluminum Film ConductorsJournal of Applied Physics, 1970
- ELECTROMIGRATION IN SINGLE-CRYSTAL ALUMINUM FILMSApplied Physics Letters, 1970
- Electromigration in thin gold filmsIEEE Transactions on Electron Devices, 1969
- The effects of dielectric overcoating on electromigration in aluminum interconnectionsIEEE Transactions on Electron Devices, 1969
- Electromigration failure modes in aluminum metallization for semiconductor devicesProceedings of the IEEE, 1969
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968
- DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMSApplied Physics Letters, 1967
- SOME OBSERVATIONS ON THE ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1967