1.54 μm emission dynamics of erbium-doped zinc-oxide thin films
- 26 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26) , 3935-3937
- https://doi.org/10.1063/1.126826
Abstract
Erbium-related 1.54 μm emission dynamics of Er-doped ZnO thin films has been investigated for the different excitation conditions. The excitation was achieved either by exciting indirectly Er3+ ions due to an electron–hole-mediated process or exciting directly discrete energy levels of Er3+ ions. There is no change in the 1.54 μm emission spectrum feature in spite of the different excitation conditions, whereas dramatic change can be seen in the rise time of 1.54 μm emission. The shorter rise time of 1.54 μm emission observed for indirect excitation implies an excitation efficiency superior to direct excitation of Er3+ ions.Keywords
This publication has 11 references indexed in Scilit:
- Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applicationsApplied Physics Letters, 1999
- Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablationApplied Physics Letters, 1999
- Room-temperature luminescence from erbium-doped silicon thin films prepared by laser ablationApplied Physics Letters, 1996
- Novel broad-band excitation of Er3+ luminescence in chalcogenide glassesApplied Physics Letters, 1995
- Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diodeApplied Physics Letters, 1994
- Selective formation of an efficient Er-O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygenJournal of Applied Physics, 1993
- Local structure of 1.54-μm-luminescence Er3+ implanted in SiApplied Physics Letters, 1992
- Preparation of Oxide Thin Films by Laser AblationJapanese Journal of Applied Physics, 1992
- Evaluation of erbium-doped silicon for optoelectronic applicationsJournal of Applied Physics, 1991
- Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materialsElectronics Letters, 1989