Strained Layer Semiconductor Films: Structure and Stability
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channelingPhysical Review Letters, 1987
- Summary Abstract: Structural analysis of ultrathin epitaxial Ge/Si films on Si(100)Journal of Vacuum Science & Technology B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Ge-Si layered structures: Artificial crystals and complex cell ordered superlatticesApplied Physics Letters, 1986
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100)Journal of Applied Physics, 1984
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- COHERENT INTERFACES AND MISFIT DISLOCATIONSPublished by Elsevier ,1975