Hot electron reliability and ESD latent damage

Publisher Website

6 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/relphy.1988.23418

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

ESD on CHMOS Devices - Equivalent Circuits, Physical Models and Failure Mechanisms
8th Reliability Physics Symposium, 1985
A reliable approach to charge-pumping measurements in MOS transistors
IEEE Transactions on Electron Devices, 1984
Charge pumping in MOS devices
IEEE Transactions on Electron Devices, 1969