A simple analytical model for estimating DC ? of lateral p-n-p transistors
- 1 January 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (1) , 62-64
- https://doi.org/10.1109/T-ED.1978.19034
Abstract
A quasi-one-dimensional model which can estimate dc α of lateral (p-n-p) transistors fairly accurately is proposed. Variation of α with epilayer thickness and electric field in the buried layer is investigated. Results obtained are in good agreement with the two-dimensional analysis.Keywords
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