Investigation of Amorphous-Crystalline Silicon Interface Via Capacitance Techniques
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Chapter 2 Density of States from Junction Measurements in Hydrogenated Amorphous SiliconPublished by Elsevier ,1984
- Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap statesPhysical Review B, 1982
- Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous SiliconPhysical Review Letters, 1982
- Thickness dependent conductivity of n-type hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980