Spin injection into amorphous semiconductors

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Abstract
Using a realistic model for the atomic and electronic structure of amorphous silicon, we explore spin injection into amorphous semiconductors. We calculate the spin-dependent conductance of magnetoresistive devices within the Landauer-Büttiker formalism including inelastic scattering. We find that reducing the density of injected carriers and increasing the spin polarization of the electrodes are favorable for spin injection, whereas inelastic scattering is detrimental, and show that the upper limit for magnetoresistance is given by Julliere’s formula.