Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Space charge limited currents of holes in intrinsic hydrogenated amorphous silicon (a-Si:H) have been obtained using novel p+-intrinsic-p+ (p-i-p) structures. The presence of these hole space charge limited currents is verified from their temperature dependence and their dependence on a wide range of intrinsic layer thickness. The carrier transport and space charge limited currents in the p-i-p structures are compared with those of n-i-n structures and the results are discussed in terms of a self consistent density of states in the gap.Keywords
This publication has 8 references indexed in Scilit:
- Conduction properties of thin N+/I/N+ a-Si:H structuresJournal of Non-Crystalline Solids, 1989
- Theory of space-charge-limited currents in materials with an exponential energy distribution of capture centersSolid-State Electronics, 1989
- Internal photoemission of holes and the mobility gap of hydrogenated amorphous siliconPhysical Review Letters, 1989
- Range of validity of the surface-photovoltage diffusion length measurement: A computer simulationJournal of Applied Physics, 1988
- Space-charge-limited conduction for the determination of the midgap density of states in amorphous silicon: Theory and experimentPhysical Review B, 1984
- Photo-induced degradation of a-Si: H diodes with an nin structureSolid State Communications, 1984
- Influence of excess carriers on the Staebler and Wronski effect of a-Si solar cellsJournal of Non-Crystalline Solids, 1983
- The general scaling rule for space charge currentsThin Solid Films, 1973