Magnetic properties of ion-beam sputter-deposited Fe-Ni-B-Si films
- 15 April 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (8) , 4315-4317
- https://doi.org/10.1063/1.340213
Abstract
We have produced Fex‐Ni80−x ‐B15‐Si5 (x=20, 40, and 75) and permalloy thin films on a silicon substrate using ion‐beam sputtering technique. Four‐point probe measurement indicated that quarternary films had 3–4 times higher resistivity than permalloy films, and this ratio was not changed after thermal annealing. The values of saturation magnetization were determined to be 5–13 kG depending on Fe concentration. The anisotropy fields of these films were in the ranges of 2–15 Oe after deposition, however, these values were reduced by more than 50% after annealing with field. The lowest value of the anisotropy field was 1.3 Oe for the permalloy film after thermal annealing without field.This publication has 3 references indexed in Scilit:
- Thermal, magnetic, and magnetomechanical properties of amorphous Fe80-xNixB15Si5IEEE Transactions on Magnetics, 1985
- Amorphous ferromagnetic thin filmsApplied Physics Letters, 1978
- Electrical resistivity and Curie temperature of amorphous (FeNi)PC alloysPhysics Letters A, 1973