Diffusion of oxygen in superconductingceramic oxides
- 1 January 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (1) , 304-314
- https://doi.org/10.1103/physrevb.39.304
Abstract
We have used in situ resistivity measurements to monitor the diffusion of oxygen in and out of the ceramic oxide . The study of out-diffusion of oxygen was carried out by annealing the oxide in ambient helium at constant heating rates and at constant temperatures. The rate of out-diffusion of oxygen has been found to be independent of , and the resistivity changes linearly with time during isothermal anneals. Assuming that the rate of out-diffusion is surface reaction limited, we have determined a surface barrier of 1.7 eV. The study of in-diffusion of oxygen was performed by annealing the oxygen-deficient oxide () in ambient oxygen. The in-diffusion rate was found to depend strongly on ; we have determined the activation energies of the process at and to be 0.5 eV and 1.3 eV, respectively. The diffusivity of oxygen for has been determined to be /sec. Combining the kinetic data and published structural information, we have examined a vacancy mechanism and a twinning mechanism for anisotropic diffusion of oxygen in the CuO layer between the BaO layers.
Keywords
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