Reliability analysis of self-aligned bipolar transistor under forward active current stress
- 1 January 1986
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 650-653
- https://doi.org/10.1109/iedm.1986.191275
Abstract
The effects of forward active current stress on the electrical characteristics of self-aligned bipolar transistors are reported. The dominant emitter-base junction degradation appears to be due to interface-state generation underneath the sidewall oxide. The leakage current increase in the collector mainly results from electron trapping at the field-oxide/silicon interface. Electromigration at the contact was identified to be the cause of increased collector resistance on those devices without adequate reach-through post-implant annealing treatment.Keywords
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