MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (1) , 104-109
- https://doi.org/10.1109/16.554800
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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