Automated growth of AlxGa1−xAs and InxGa1−xAs by molecular beam epitaxy using an ion gauge flux monitor
- 1 July 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (4) , 964-967
- https://doi.org/10.1116/1.583023
Abstract
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