Steps and spikes in current-voltage characteristics of oxide/microcrystallite-silicon/oxide diodes
- 13 April 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (15) , 1827-1829
- https://doi.org/10.1063/1.107177
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Tunneling in vertical μcSi/aSixCyOz:H/μcSi heterostructuresJournal of Non-Crystalline Solids, 1989
- A new model for dielectric-breakdown phenomenon in silicon dioxide filmsJournal of Applied Physics, 1987
- Dependence of grain size on the substrate temperature of Si and Ge films prepared by evaporation under ultrahigh vacuumApplied Physics Letters, 1986
- Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge filmsApplied Physics Letters, 1985
- Lowering of the breakdown voltage of silicon dioxide by asperities and at spherical electrodesSolid-State Electronics, 1983