The electrical properties of porous silicon produced from n+ silicon substrates
- 1 January 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 255 (1-2) , 12-15
- https://doi.org/10.1016/0040-6090(94)05622-k
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Nonlinear electrical transport in porous siliconPhysical Review B, 1994
- Behavior of a rectifying junction at the interface between porous silicon and its substrateJournal of Applied Physics, 1994
- Spectroscopic identification of the luminescence mechanism of highly porous siliconJournal of Luminescence, 1993
- AC conductivity in porous siliconJournal of Luminescence, 1993
- Investigations of the Electrical Properties of Porous SiliconJournal of the Electrochemical Society, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- MOS interface states: overview and physicochemical perspectiveSemiconductor Science and Technology, 1989