60 GHz VCO with wideband tuning range fabricated on VLSI SOI CMOS technology
- 19 October 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1329-1332
- https://doi.org/10.1109/mwsym.2004.1338813
Abstract
A 60 GHz cross-coupled differential LC CMOS VCO is presented in this paper, which is optimized for a large frequency tuning range using conventional MOSFET varactors. The MMIC is fabricated on digital 90 nm SOI technology and requires a circuit area of less than 0.1 mm2 including the 50 Ω output buffers. Within a frequency control range from 52.3 GHz to 60.6 GHz, a supply voltage of 1.5 V and a supply current of 14 mA, the circuit delivers a very constant output power of -6.8 ± 0.2 dBm and yields a phase noise between -85 to -92 dBc/Hz at 1 MHz frequency offset.Keywords
This publication has 4 references indexed in Scilit:
- 30–40-GHz Drain-Pumped Passive-Mixer MMIC Fabricated on VLSI SOI CMOS TechnologyIEEE Transactions on Microwave Theory and Techniques, 2004
- A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Performance-optimized microstrip coupled VCOs for 40-GHz and 43-GHz OC-768 optical transmissionIEEE Journal of Solid-State Circuits, 2003
- Accumulation MOS varactors for 4 to 40 GHz VCOs in SOI CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002