Depth scale distortions in shallow implant secondary ion mass spectrometry profiles

Secondary ion mass spectrometry analysis of ultrashallow boron implants is typically performed using sub-keV ${\mathrm{O}}_{\mathrm{2}}^{\mathrm{+}}$ primary ion beams, either at normal or oblique (with ${\mathrm{O}}_{\mathrm{2}}$ leak) incidence bombardment. This article investigates the distortion of depth profiles which may be due to sputter rate changes near the surface or primary ion beam induced mixing/roughening under the primary ion bombardment conditions mentioned above.