Photocapacitance of deep levels in GaAs:Cr and GaAs:O
- 30 September 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (9) , 1095-1098
- https://doi.org/10.1016/0038-1101(78)90342-8
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
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- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
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- The relationship between thermally stimulated luminescence and thermally stimulated conductivityBritish Journal of Applied Physics, 1967