Depth distribution of secondary defects in 2-MeV boron-implanted silicon
- 15 May 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (10) , 3417-3420
- https://doi.org/10.1063/1.336808
Abstract
Annealing behavior of secondary defects in 2-MeV boron ion-implanted (100) silicon has been investigated mainly through cross-sectional TEM observations. The maximum defect density is located at a mean depth of 3.2 μm from the surface and the location is 0.3 μm deeper than that of the projected range of boron ions. This defect position in the crystal is constant under all annealing conditions (e.g., a temperature range of between 700 and 1000 °C, annealing time of up to 6780 min at 1000 °C), although the vertical distribution width of defects changes with both annealing temperature and time.This publication has 8 references indexed in Scilit:
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