Experimental and theoretical characterization of submicron MOSFETs

1 January 1980

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1980.189743

Abstract

We report on measurements and computer simulations for enhancement and depletion MOSFETs with submicron channel lengths as small as 0.2 µm. The behavior of the devices is analyzed using both advanced techniques such as transmission electron microscopy for profile measurements and numerical models to simulate processing conditions and device behavior in two dimensions.

Keywords

MOSFETS
IMPLANTS
DOPING
SOLID MODELING
TRANSMISSION ELECTRON MICROSCOPY
NUMERICAL SIMULATION
GEOMETRY
FABRICATION
TESTING
ANNEALING

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