Dephasing in InAs/GaAs quantum dots
- 15 September 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 60 (11) , 7784-7787
- https://doi.org/10.1103/physrevb.60.7784
Abstract
The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured using two independent methods: spectal-hole burning and four-wave mixing. Dephasing times weakly dependent on the excitation density are found, with a low density value of from spectal-hole burning and of from four-wave mixing.
Keywords
This publication has 22 references indexed in Scilit:
- Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristicsApplied Physics Letters, 1999
- Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theoryPhysical Review B, 1999
- InGaAs-GaAs quantum-dot lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Transient four-wave mixing with a collinear pump and probeOptics Letters, 1996
- Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum DotScience, 1996
- InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structurePhysical Review B, 1995
- Phonon broadening of excitons in GaAs/As quantum wellsPhysical Review B, 1995
- Spectrally resolved four-wave mixing in semiconductors: Influence of inhomogeneous broadeningPhysical Review B, 1994
- Subpicosecond gain and index nonlinearities in InGaAsP diode lasersOptics Communications, 1994
- Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopyPhysical Review Letters, 1991