Challenges for a Si/Ge heterodevice technology

This publication has 26 references indexed in Scilit:

• Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
  Applied Physics Letters, 1993
• Electroluminescence at room temperature of a SinGem strained-layer superlattice
  Applied Physics Letters, 1993
• p-type Ge-channel MODFETs with high transconductance grown on Si substrates
  IEEE Electron Device Letters, 1993
• Characterization of short-period Sim Gen superlattices by high-resolution transmission electron microscopy and X-ray diffraction
  Thin Solid Films, 1992
• Near-future perspectives for Si and Si1−yGey bipolar transistors
  Microelectronic Engineering, 1992
• High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
  IEEE Electron Device Letters, 1992
• High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
  Semiconductor Science and Technology, 1992
• Enhancement mode n -channel Si/SiGe MODFET with high intrinsic transconductance
  Electronics Letters, 1992
• Silicon Germanium Heterobipolar Transistor Structures with Extremely High Base Doping
  MRS Proceedings, 1991
• Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]
  Applied Physics Letters, 1986