The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality
- 1 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7) , 3476-3480
- https://doi.org/10.1063/1.341482
Abstract
The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.This publication has 5 references indexed in Scilit:
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