Comparison of the Etching and Plasma Characteristics of Discharges in CF 4 and NF 3
- 1 October 1981
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 128 (10) , 2174-2179
- https://doi.org/10.1149/1.2127212
Abstract
Experiments were performed to explore the correlation (or lack thereof) between the surface effect and plasma characteristics of discharges in and . The optical emission from excited fluorine can be greatly enhanced by the dilution of these gases with helium, yet the etch rate of Si (or ) is decreased by this dilution. The effect of biasing the sample with respect to the plasma potential was investigated, and for , evidence was found for a reaction involving a negative ion.Keywords
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