IR-OPFET: Infrared Sensor Using PbTiO3 Pyroelectric Film
- 1 January 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (S1) , 315
- https://doi.org/10.7567/jjaps.20s1.315
Abstract
IR-OPFET having a structure of PbTiO3 thin film gate on Si FET has been fabricated. The pyroelectric property of a tiny PbTiO3 thin film provides a high speed infrared sensitivity with a wide wavelength range at room temperature. A typical performance as an IR-OPFET is that voltage responsivity Rv and detectivity D* are 390 V/W and 3.5×105 cm√Hz/W, respectively, at 20 Hz under infrared irradiation coming through a Ge filter from an incandenscent lamp. The rise time of the response measured by one shot of CO2 laser pulse is estimated to be about 3.5 µsec.Keywords
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