Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness During Solid Phase Epitaxial Growth in Si

This publication has 12 references indexed in Scilit:

• Interface roughness during thermal and ion-induced regrowth of amorphous layers on Si(001)
  Applied Physics Letters, 1994
• Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon
  MRS Proceedings, 1994
• Stress singularities along a cycloid rough surface
  International Journal of Solids and Structures, 1993
• Viscosity and elastic constants of amorphous Si and Ge
  Journal of Applied Physics, 1993
• Interface Stability During Solid Phase Epitaxy Of Strained Ge_xS_1-x Films on Si (100)
  MRS Proceedings, 1993
• Pressure-enhanced crystallization kinetics of amorphous Si and Ge: Implications for point-defect mechanisms
  Journal of Applied Physics, 1991
• The activation strain tensor: Nonhydrostatic stress effects on crystal-growth kinetics
  Physical Review B, 1991
• Kinetics of solid phase crystallization in amorphous silicon
  Materials Science Reports, 1988
• A structural model for the interface between amorphous and crystalline Si or Ge
  Acta Metallurgica, 1978
• Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion
  Metallurgical Transactions, 1972