MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 825-832
- https://doi.org/10.1016/s0022-0248(96)01030-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- High CW power (>200 mW/facet) at 3.4 µmfrom InAsSb/InAlAsSb strained quantum well diode lasersElectronics Letters, 1996
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μmApplied Physics Letters, 1995
- Growth of InAsSb quantum wells for long-wavelength (∼4 μm) lasersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Demonstration of 3.5 µm Ga 1-
x
In
x
Sb/InAssuperlattice diodelaserElectronics Letters, 1995
- Quantum Cascade LaserScience, 1994
- Molecular-beam epitaxy growth of high-performance midinfrared diode lasersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interfaceJournal of Applied Physics, 1990