Coupled On/Off‐Buried Layer Modeling of Growth Rate Dependence of Arsenic Autodoping Profiles in Silicon

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Abstract
A detailed phenomenological model is presented for the growth rate dependence of arsenic autodoping profiles in silicon. The model was inferred from numerical simulation of arsenic diffusion during epi prebake and growth stages. Simultaneously simulated were a region with a buried layer and a separate region with no buried layer. The model employs a two‐state adsorbed layer on the silicon surface and a set of kinetic coefficients which enable the modeling of measured lateral peak concentrations, doses, and epi gradients. The model has been implemented in a pseudo two‐dimensional modification of the SUPREM program.
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