Injection in a continuum miniband: Observation of negative transconductance in a superlattice-base transistor
- 9 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (15) , 1534-1536
- https://doi.org/10.1063/1.102237
Abstract
We report the first observation of electron injection in a continuum miniband and of the associated negative transconductance in a semiconductor heterostructure. In a superlattice‐base unipolar transistor, electrons are injected into a miniband lying in the classical continuum of energy. They are collected by a compositionally graded collector barrier. Negative transconductance is observed due to suppression of miniband conduction in the base.Keywords
This publication has 22 references indexed in Scilit:
- Resonant Tunnelling and Miniband Conduction in GaAs/AlAs Superlattices Studied by Electrical Time-Of-Flight TechniquesEurophysics Letters, 1989
- Interaction phenomena between deep levels and minibands in semiconductor superlatticesPhysical Review B, 1988
- Bound-to-extended state absorption GaAs superlattice transport infrared detectorsJournal of Applied Physics, 1988
- GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTeElectronics Letters, 1988
- Structured-base hot-electron transistors. I. Scattering ratesSemiconductor Science and Technology, 1988
- Doping superlattices ("n-i-p-i crystals")IEEE Journal of Quantum Electronics, 1986
- Observation of negative differential resistance in CHIRP superlatticesElectronics Letters, 1985
- Tunneling between Two Strongly Coupled SuperlatticesPhysical Review Letters, 1985
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Effects of Quantum States on the Photocurrent in a "Superlattice"Physical Review Letters, 1975