Some effects of mobile donors on electron trapping at semiconductor surfaces
- 1 May 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 352-354, 765-770
- https://doi.org/10.1016/0039-6028(95)01225-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Computer simulation of the surface energy barrier of oxidic semiconductors with mobile donorsSensors and Actuators B: Chemical, 1994
- Ultrathin heteroepitaxial SnO2 films for use in gas sensorsJournal of Vacuum Science & Technology A, 1993
- Rate equation simulation of the height of Schottky barriers at the surface of oxidic semiconductorsSensors and Actuators B: Chemical, 1993
- Conductance, work function and catalytic activity of SnO2-based gas sensorsSensors and Actuators B: Chemical, 1991
- Surface processes in the detection of reducing gases with SnO2-based devicesSensors and Actuators, 1989
- Theoretical description of gas-film interaction on SnOxThin Solid Films, 1988
- Physical Properties of SnO2 Materials: III . Optical PropertiesJournal of the Electrochemical Society, 1976
- Defect structure and electronic donor levels in stannic oxide crystalsJournal of Applied Physics, 1973
- Surface phenomena and diffusion mechanism of the movement of defects in ionic crystalsJournal of Physics and Chemistry of Solids, 1967
- On the Solution of the Poisson-Boltzmann Equation with Application to the Theory of Thermal ExplosionsThe Journal of Chemical Physics, 1952