Islands formation conditions in silicon-germanium alloys grown by MBE
- 2 December 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 157 (1-4) , 255-259
- https://doi.org/10.1016/0022-0248(95)00412-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990