Ellipsometric investigation of ion-implanted GaAs
- 30 June 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 96 (1-3) , 307-318
- https://doi.org/10.1016/0039-6028(80)90309-x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Characterization of 31P+-implanted Si layers by ellipsometryJournal of Applied Physics, 1979
- Electrical measurements and optical activation studies in Mg-implanted GaAsJournal of Applied Physics, 1979
- Flux and fluence dependence of implantation disorder in GaAs substratesJournal of Applied Physics, 1978
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978
- Annealing of Te-implanted GaAs by ruby laser irradiationApplied Physics Letters, 1978
- Investigation of ion-implanted GaP layers by ellipsometryJournal of Applied Physics, 1977
- Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometrySurface Science, 1975