Investigation of ion-implanted GaP layers by ellipsometry
- 1 December 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12) , 5052-5056
- https://doi.org/10.1063/1.323579
Abstract
Ion‐implanted gallium‐phosphide layers have been examined by ellipsometry. This technique provides a nondestructive means of measuring radiation damage. The index of refraction increases with ion dose except when ion‐beam‐radiation annealing causes a decrease in the extinction coefficient. A marked difference is observed in radiation‐damage annealing between light and heavy ions. A computer calculation was performed to investigate the variation in the complex index of refraction due to implanted‐ion fluence; agreement with experimental data was obtained.This publication has 14 references indexed in Scilit:
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