Proton-implanted GaP optical waveguide
- 1 April 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (4) , 1925-1926
- https://doi.org/10.1063/1.1662486
Abstract
Waveguiding in the visible spectrum has been observed in proton‐implanted n‐type GaP. The results obtained indicate that waveguide formation results from free carrier index change of the substrate refractive index with respect to that of the implanted layer.This publication has 4 references indexed in Scilit:
- Optical waveguiding in proton-implanted GaAsApplied Physics Letters, 1972
- OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDESApplied Physics Letters, 1970
- MIS electroluminescent diodes in ZnTeSolid-State Electronics, 1970
- Optical Absorption Due to Excitation of Electrons Bound to Si and S in GaPPhysical Review B, 1969