Addendum: Deep emission band at GaInP/GaAs interface
- 1 October 1997
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (7) , 3630-3632
- https://doi.org/10.1063/1.365686
Abstract
We have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well.This publication has 7 references indexed in Scilit:
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