Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 786-791
- https://doi.org/10.1016/0022-0248(94)91143-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
- Bundesministerium für Forschung und Technologie
- Emory Eye Center (6134)
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