MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications
- 31 May 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 18 (1-2) , 189-205
- https://doi.org/10.1016/0167-9317(92)90128-e
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Physical properties of non-pyrophoric group III precursors for MOVPEJournal of Crystal Growth, 1991
- Alternative precursors for III–V MOVPE — Promises and problemsProgress in Crystal Growth and Characterization of Materials, 1991
- Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescenceApplied Physics Letters, 1990
- Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfacesApplied Physics Letters, 1989
- Optical and structural properties of GaAs grown on (100) Si by molecular-beam epitaxyJournal of Applied Physics, 1988
- Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor depositionJournal of Electronic Materials, 1987
- Biatomic Steps on (001) Silicon SurfacesPhysical Review Letters, 1986
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984
- Surface Infrared Study of Si(100)-(2×1)HPhysical Review Letters, 1984
- Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructuresApplied Physics Letters, 1983