Alternative precursors for III–V MOVPE — Promises and problems
- 1 January 1991
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization of Materials
- Vol. 22 (1-2) , 1-18
- https://doi.org/10.1016/0960-8974(91)90023-6
Abstract
No abstract availableThis publication has 50 references indexed in Scilit:
- Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgalliumApplied Physics Letters, 1990
- MOMBE and MOVPE—A comparison of growth techniquesProgress in Crystal Growth and Characterization, 1989
- Gas phase and surface reactions in the MOCVD of GaAs from triethylgallium, trimethylgallium, and tertiarybutylarsineJournal of Crystal Growth, 1988
- Residual impurities in epitaxial layers grown by MOVPEJournal of Crystal Growth, 1988
- Organometallic Vapor-Phase Epitaxy of GaAs Using Triethylarsenic as Arsenic SourceJapanese Journal of Applied Physics, 1988
- A Mass Spectrometric Study of the Reaction of Triethylindium with Arsine GasJournal of the Electrochemical Society, 1988
- Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEGJournal of the Electrochemical Society, 1988
- Metal organics vapour phase epitaxy of GaAs : Raman studies of complexes formationRevue de Physique Appliquée, 1985
- InP epitaxy with a new metalorganic compoundElectronics Letters, 1980
- 446. Trimethylgallium. Part I. The relative stabilities of its co-ordination compounds with the methyl derivatives of groups VBand VIB, and the thermal decomposition of some trimethylgallium–amine complexesJournal of the Chemical Society, 1951