Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgallium
- 29 January 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5) , 478-480
- https://doi.org/10.1063/1.102771
Abstract
Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical vapor deposition using liquid tertiarybutylarsine and triethylgallium. n‐type layers were obtained having total residual shallow acceptor concentrations of ∼1013 cm−3 and Hall mobilities comparable to those obtained with arsine and triethylgallium in the same reactor. Liquid‐nitrogen Hall mobilities up to 116 000 cm2 /V s were observed.Keywords
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