Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine
- 15 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (20) , 2029-2031
- https://doi.org/10.1063/1.101182
Abstract
The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.Keywords
This publication has 12 references indexed in Scilit:
- Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1988
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988
- Arsine Adsorption on Activated CarbonJournal of the Electrochemical Society, 1988
- Replacements for arsine and phosphine in MOCVD processingAIP Conference Proceedings, 1988
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- Uniform growth of GaAs by MOCVD on multi-wafersJournal of Crystal Growth, 1986
- Integrated safety system for MOCVD laboratoryJournal of Crystal Growth, 1986
- Electron mobility in n-type GaAs at 77 K: Determination of the compensation ratioJournal of Applied Physics, 1982