Uniform growth of GaAs by MOCVD on multi-wafers
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 157-162
- https://doi.org/10.1016/0022-0248(86)90296-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactorJournal of Electronic Materials, 1985
- Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor DepositionJournal of the Electrochemical Society, 1985
- Emergence of a periodic mode in the so-called turbulent region in a circular Couette flowJournal de Physique Lettres, 1982
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970