Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactor
- 1 November 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (6) , 769-781
- https://doi.org/10.1007/bf02654310
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- THE PYROLYSIS OF TRIMETHYL GALLIUMCanadian Journal of Chemistry, 1963