Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine method
- 31 December 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (5-6) , 613-618
- https://doi.org/10.1016/0022-0248(79)90002-2
Abstract
No abstract availableKeywords
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