Growth of semi-insulating epitaxial gallium arsenide by chromium doping in the metal-alkyl+hydride system
- 1 August 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 44 (1) , 29-33
- https://doi.org/10.1016/0022-0248(78)90324-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electrical compensation in semi-insulating GaAsJournal of Applied Physics, 1977
- A model relating electrical properties and impurity concentrations in semi-insulating GaAsJournal of Applied Physics, 1977
- Control of Sulfur Doping for Gallium Arsenide Epitaxial LayersJournal of the Electrochemical Society, 1976
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Epitaxial Gallium Arsenide from Trimethyl Gallium and ArsineJournal of the Electrochemical Society, 1969
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969